U.S. Army selects Navitas for ALATTIS 10 kV silicon-carbide power-semiconductor programme

Navitas Semiconductor (Nasdaq: NVTS) announced on 28 September 2026 that it has been awarded the U.S. Army's ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) programme to develop next-generation 10 kV silicon-carbide (SiC) power-semiconductor technology.

Following a competitive evaluation, the U.S. Army selected Navitas from among leading U.S. silicon-carbide technology companies, citing its ultra-high-voltage SiC leadership, defence-grade performance and reliability, and its resilient, U.S.-anchored manufacturing ecosystem for advanced power semiconductors.

Ultra-high-voltage SiC devices are central to next-generation directed-energy, electrification and grid-hardening applications, giving the award clear defence and dual-use significance.

Read more: GlobeNewswire