Zhejiang Guangxin Microelectronics

Zhejiang Guangxin Microelectronics Co., Ltd. is a semiconductor foundry operator established on October 9, 2021. The company's legal representative and CEO is Xie Gang. Guangxin Microelectronics focuses on the manufacturing segment of the semiconductor industry, specializing in wafer fabrication. The company's business strategy is centered around providing "customized foundry" services, driven by market demand.

The company's primary offerings include a silicon-based wafer foundry production line. It manufactures high-end silicon-based power semiconductor devices, such as IGBT and TMBS, on a 6-inch platform. Additionally, the firm is expanding into third-generation semiconductors like silicon carbide (SiC) and gallium nitride (GaN) power devices, as well as advanced 8-inch silicon-based power devices, including Split-gate Trench MOS, CoolMOS, and high-voltage BCD process technologies. These products serve a diverse client base across sectors such as automotive electronics, industrial control, high-voltage rail transit, and ultra-high-voltage power systems.

The company operates as a contract manufacturer, generating revenue by producing semiconductor wafers for other companies. Since its founding, Guangxin Microelectronics has secured significant funding to support its expansion. The financing history includes an Angel round of 60 million RMB in October 2021, a Pre-A round of 150 million RMB in February 2022, and an A-round of 180 million RMB in December 2022, with key investors like Minde Electronics and Lishui Green Industry Development Fund. The company's project is a phased development, with the first phase focused on establishing a 6-inch production line and the second phase aimed at building capacity for third-generation semiconductors and 8-inch wafers.

Keywords: semiconductor foundry, wafer fabrication, power semiconductors, silicon-based wafers, IGBT, SiC devices, GaN devices, customized foundry, automotive electronics, industrial control, contract manufacturing, power management chips, third-generation semiconductors, silicon carbide, gallium nitride, Split-gate Trench MOS, CoolMOS, BCD process