Synlight Crystal

Hebei Synlight Crystal Co., Ltd., now known as Hebei Tongguang Semiconductor Co., Ltd., was established in 2012 by founder Zheng Qingchao. Zheng, a serial entrepreneur, had prior experience in the power electronics and eco-friendly conservation sectors, which exposed him to the semiconductor materials industry. Recognizing the potential of third-generation semiconductor materials, he ventured into the silicon carbide (SiC) sector to address the domestic reliance on expensive imported electronic components.

The company focuses on the research, development, and production of third-generation semiconductor material, specifically silicon carbide single crystal substrates. Its business model encompasses the entire production process, from powder synthesis and crystal growth to substrate processing and wafer inspection. Synlight Crystal serves a market driven by emerging industries such as 5G communications, new energy vehicles (NEVs), smart grids, and photovoltaic applications. A significant milestone was achieved when Great Wall Motors acquired a stake in the company in late 2021, aiming to secure its supply chain for the rapidly growing EV segment.

Synlight Crystal's core products are N-Type and High-Purity Semi-Insulating (HPSI) SiC substrates, available in 4-inch, 6-inch, and more recently, 8-inch diameters. These substrates are crucial components for manufacturing high-performance electronic devices. For instance, the high-purity semi-insulating substrates are used in high-frequency chips for 5G base stations, while the conductive N-type substrates are essential for power electronics in electric vehicles, significantly enhancing their efficiency and range. The company has a significant production capacity, with facilities capable of producing hundreds of thousands of wafers annually.

A key aspect of Synlight's strategy is its deep integration of research and development through collaborations. The company works closely with the Institute of Semiconductors of the Chinese Academy of Sciences, and has established joint laboratories and an academician workstation, bringing in prominent scientists. This focus on R&D has led to numerous patents and the successful development of larger and higher quality SiC wafers, including an 8-inch sample in 2022. The company has received substantial financial backing through multiple funding rounds, including a significant Series F round, from investors like Shenzhen Capital Group and Great Wall Motor, underscoring strong market confidence in its technological capabilities and growth prospects.

Keywords: silicon carbide substrate, SiC wafer, third-generation semiconductor, power electronics, new energy vehicles, 5G communication, semiconductor materials, crystal growth, substrate manufacturing, N-Type SiC, HPSI SiC, EV components, semiconductor R&D, Hebei Tongguang Semiconductor, Zheng Qingchao, Chinese Academy of Sciences collaboration, SiC single crystal, advanced electronic materials, photovoltaic applications, smart grid components