Suzhou Enjing Semiconductor Technology

Suzhou Enjing Semiconductor Technology Co., Ltd. (also known as Enkris Semiconductor) is a key player in the third-generation semiconductor materials industry, focusing on the research, development, and industrialization of Gallium Nitride (GaN) epitaxial materials. The company was founded in March 2012 by Dr. Kai Cheng, who is recognized as a pioneer in GaN-on-Si (Gallium Nitride on Silicon) epitaxial technology.

Dr. Cheng earned his bachelor's and master's degrees from Tsinghua University's Department of Electronic Engineering and a joint Ph.D. from KU Leuven and IMEC in Belgium. Prior to establishing Enjing Semiconductor, he was a senior scientist at IMEC, where he was instrumental in developing 6-inch and 8-inch GaN-on-Si power electronic materials. His extensive experience and academic background have been central to the company's technological advancements.

Enjing Semiconductor provides high-quality GaN epitaxial material solutions for a variety of applications, including power electronics, radio frequency (RF) electronics, and micro-displays. Their client base includes hundreds of semiconductor technology companies and research institutions globally. The company's business model is centered on supplying these advanced materials, which are crucial for producing high-performance electronic devices. The company's products, such as the Enkris wafer, are optimized for low buffer leakage and trapping, which enhances device performance. Enjing Semiconductor has achieved significant milestones, including being the first to globally release commercial 8-inch GaN-on-Si epiwafers in late 2014 and the world's first 12-inch GaN-on-Si epiwafers for power electronics in September 2021. This makes them the only manufacturer in the world capable of supplying 300mm GaN-on-Si epitaxial products. The company operates an advanced GaN epitaxial material production line in Suzhou Nano City. The company holds a substantial intellectual property portfolio, with over 700 patent applications and nearly 200 granted patents in the GaN epitaxy field.

Keywords: Gallium Nitride, GaN, epitaxial materials, GaN-on-Si, semiconductor materials, power electronics, RF electronics, micro-displays, epiwafers, wide-bandgap semiconductor, third-generation semiconductor, Enkris Semiconductor